PRODUCT CENTER
WAFER
Poly
Wafer Dimention
157.0±0.25mm
Thickness
180+20/-10µm
TTV
≤30µm
Line mark
Depth ≤15.0 µm. The number of line marks within a 1 cm width on the wafer surface shall be ≤5, measured using a contact-type surface roughness gauge or automatic inspection equipment (e.g., Mitutoyo SJ-210), with each line mark having a depth of ≤10 µm. Applicable to diamond-wire sliced silicon wafers (Multi-siWafer). Line mark spacing shall be ≥2 mm (controlled at 4 mm).
Wafer Dimention
156.75*156.75mm，158.75*158.75mm，166*166mm，182*182mm，210*210mm
Thickness
(150/160/170/175/180) +20/- 10µm， (150/160/165/170/175/180)+20/- 10µm， (150/160/165/170/175/180) +20/- 10µm， (150/160/165/170/175/180) +20/- 10µm， (150/160/165/170/175/180) +20/- 10µm ，ASTM F533
TTV
≤27 µm, ≤27 µm, ≤27 µm, ≤27 µm, ≤30 µm, ASTM F533,F657
Line mark
≤ 13 µm, ≤ 13µm, ≤ 13µm, ≤ 15µm, ≤15µm, CCD/SJ-201(301)